Enhancing thermoelectric performance of SrFBiS2−xSex via band engineering and structural texturing

Article

Huang, Hai, Lin, Chen, Li, Shijing, Guo, Kai, Zhang, Jianxin, Lyu, Wanyu, Zhang, Jiye, Xing, Juanjuan, Jiang, Ying, Yang, Jiong and Luo, Jun. 2022. "Enhancing thermoelectric performance of SrFBiS2−xSex via band engineering and structural texturing." Journal of Materiomics. 8 (2), pp. 302-310. https://doi.org/10.1016/j.jmat.2021.09.006
Article Title

Enhancing thermoelectric performance of SrFBiS2−xSex via band engineering and structural texturing

ERA Journal ID213331
Article CategoryArticle
AuthorsHuang, Hai, Lin, Chen, Li, Shijing, Guo, Kai, Zhang, Jianxin, Lyu, Wanyu, Zhang, Jiye, Xing, Juanjuan, Jiang, Ying, Yang, Jiong and Luo, Jun
Journal TitleJournal of Materiomics
Journal Citation8 (2), pp. 302-310
Number of Pages9
Year2022
PublisherElsevier BV
Place of PublicationNetherlands
ISSN2352-8478
2352-8486
Digital Object Identifier (DOI)https://doi.org/10.1016/j.jmat.2021.09.006
Web Address (URL)https://www.sciencedirect.com/science/article/pii/S2352847821001404
Abstract

SrFBiS2 is a quaternary n-type semiconductor with rock-salt-type BiS2 and fluorite-type SrF layers alternately stacked along the c axis. The tunability of the crystal and electronic structures as well as the intrinsically low thermal conductivity make this compound a promising parent material for thermoelectric applications. In the current work, we show that alloying of Se and S in SrFBiS2 reduces the optical band gap with the second conduction band serving as an electron-transport medium, simultaneously increasing the electron concentration and effective mass. In addition, the raw material Bi2Se3 is shown to act as liquid adjuvant during the annealing process, favoring preferred-orientation grain growth and forming strengthen microstructural texturing in bulk samples after hot-pressed sintering. Highly ordered lamellar grains are stacked perpendicular to the pressure direction, leading to enhanced mobility along this direction. The synthetic effect results in a maximum power factor of 5.58 μW cm−1 K−2 at 523 K for SrFBiSSe and a peak zT = 0.34 at 773 K, enhancements of 180% compared with those of pristine SrFBiS2.

KeywordsSrFBiS2; Layered compound; Energy band engineering; Carrier mobility; Texturing
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Byline AffiliationsShanghai University, China
Guangzhou University, China
Centre for Future Materials
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