Epitaxial growth of multi-structure SnO2 by chemical vapor deposition

Article


He, Dong-Ning, Hodgson, Peter and Gao, Wei-Min. 2015. "Epitaxial growth of multi-structure SnO2 by chemical vapor deposition." Acta Metallurgica Sinica (English Letters). 28 (7), pp. 946-950. https://doi.org/10.1007/s40195-015-0284-y
Article Title

Epitaxial growth of multi-structure SnO2 by chemical vapor deposition

ERA Journal ID44387
Article CategoryArticle
AuthorsHe, Dong-Ning (Author), Hodgson, Peter (Author) and Gao, Wei-Min (Author)
Journal TitleActa Metallurgica Sinica (English Letters)
Journal Citation28 (7), pp. 946-950
Number of Pages5
Year2015
Place of PublicationChina
ISSN1006-7191
Digital Object Identifier (DOI)https://doi.org/10.1007/s40195-015-0284-y
Web Address (URL)http://www.amse.org.cn/EN/volumn/volumn_2085.shtml#
Abstract

The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition
technique. It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites. 12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor–liquid–solid mechanism, respectively. The tin dioxide whiskers with core-shell structure were fabricated by vapor–solid mechanism. Meanwhile, the influences of various factors on the tin dioxide growth are also discussed.

Keywordsnanostructure; heterostructure; tin dioxide; chemical vapor deposition; carbothermal method
ANZSRC Field of Research 2020340299. Inorganic chemistry not elsewhere classified
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Byline AffiliationsCentre of Excellence in Engineered Fibre Composites
Deakin University
Institution of OriginUniversity of Southern Queensland
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