Analysis of optical pulse’s position effect on temporal response characteristics of GaAs metal-semiconductor-metal photodetector
Article
Article Title | Analysis of optical pulse’s position effect on temporal response characteristics of GaAs metal-semiconductor-metal photodetector |
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ERA Journal ID | 17712 |
Article Category | Article |
Authors | Habibpour, Atefeh (Author) and Das, Narottam (Author) |
Journal Title | World Applied Sciences Journal |
Journal Citation | 33 (9), pp. 1440-1445 |
Number of Pages | 6 |
Year | 2015 |
Place of Publication | United Arab Emirates |
ISSN | 1818-4952 |
Digital Object Identifier (DOI) | https://doi.org/10.5829/idosi.wasj.2015.33.09.288 |
Web Address (URL) | http://www.idosi.org/wasj/wasj33(9)2015.htm |
Abstract | Photocurrents in a GaAs metal-semiconductor-metal (MSM) photodetector have been numerically modelled as a function of optical pulse’s position in a one-dimensional structure using Ambipolar transport theory and discrete Fourier transform method. The modelled results represent the carriers’ concentrations as well as the maximum value of the photocurrents that pass through the device when the optical pulse position changes on the device active region (i.e., the region between two top contacts). The simulation has been performed at low level injection of the excess carriers (i.e., photo-carriers) and with no bias voltage applied to the photodetector in equilibrium condition. The numerical simulation results show that for optical pulse position in the cathode region, the magnitude of the photocurrent is exactly the same but opposite direction of the anode region. The response of the photodetector is ‘zero’ when a pulse is positioned at the center of the active region. This important feature of the device could make it attractive for micro-scale positioning of high sensitive devices. The modelled results are qualitatively agreed with the experimentally observed behavior of the device. |
Keywords | ambipolar transport theory; discrete fourier transform method; equilibrium condition; metal-semiconductor- metal (MSM) photodetector; numerical modelling |
ANZSRC Field of Research 2020 | 400899. Electrical engineering not elsewhere classified |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Islamic Azad University, Iran |
School of Mechanical and Electrical Engineering | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q341z/analysis-of-optical-pulse-s-position-effect-on-temporal-response-characteristics-of-gaas-metal-semiconductor-metal-photodetector
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