Thermo-phototronic effect in 3c-sic/si heterostructures for sensitive self-powered sensors

Thermo-phototronic effect in 3c-sic/si heterostructures for sensitive self-powered sensors

As the world transitions to 5G wireless networks and the integration of IoT technologies, the range of technical devices available for these applications has significantly expanded. This shift has led to a marked increase in highly sensitive sensing devices and their energy sources. Currently, batteries are the most common method for powering these devices. However, these batteries have several disadvantages, including potential environmental pollution, limited lifespan, and costly maintenance. Alternatively, self-powered sensors that can capture energy from the environment without relying on batteries could provide a sustainable solution to these challenges. Among the types of environmental energy, light and thermal energy are particularly popular. With the ability to utilize both light and thermal energy, the thermo-phototronic effect has received significant interest, making it a promising approach for self-powered sensors. The thermo-phototronic effect refers to the combination of thermal and optoelectronic effects, demonstrating how temperature gradients affect the photovoltage and photocurrent in electronic materials. Among the materials for self-powered sensors, 3C-SiC/Si heterostructures are of particular interest due to their large band gap, excellent chemical inertness, self-powered capability, and high sensitivity. Additionally, the fabrication of 3C-SiC/Si heterostructures benefits from the availability of low-cost Si wafers. This research investigates the thermo-phototronic effects in 3C-SiC/Si heterostructures for self-powered sensors and aims to enhance their performance as photodetectors and temperature sensors. Firstly, the study aims to enhance the sensitivity of 3C-SiC/Si heterostructures under illumination by using a temperature gradient and boosting their self-powering capability. Additionally, the impact of doping concentration, electrode spacing, and illumination intensity is investigated. Furthermore, the study examines the effect of structural design by comparing the sensing performance of double heterostructures with single heterostructures. The results indicate the promise of using 3C-SiC/Si heterostructures for self-powered photodetectors and temperature sensors. They also demonstrate the feasibility of the thermo-phototronic effect to improve sensing performance in 3C-SiC/Si heterostructures. Additionally, in-depth discussions on band structures, charge carrier generation, and charge carrier transportation provide insights for the development of not only 3C-SiC/Si heterostructure devices but also other heterostructures. This thesis is presented in a “thesis by publication” format, with the published and submitted journal papers included in chapters 2, 3, 4, and 5.

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