Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors
Article
Nguyen, Hung, Nguyen, Duy Van, Tran, Thi Lap, Dao, Dzung Viet, Nguyen, Nam-Trung, Bell, John and Dinh, Toan. 2024. "Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors." ACS Applied Electronic Materials. 6 (9), p. 6957–6964. https://doi.org/10.1021/acsaelm.4c01287
Article Title | Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors |
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ERA Journal ID | 211582 |
Article Category | Article |
Authors | Nguyen, Hung, Nguyen, Duy Van, Tran, Thi Lap, Dao, Dzung Viet, Nguyen, Nam-Trung, Bell, John and Dinh, Toan |
Journal Title | ACS Applied Electronic Materials |
Journal Citation | 6 (9), p. 6957–6964 |
Number of Pages | 8 |
Year | 2024 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 2637-6113 |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsaelm.4c01287 |
Web Address (URL) | https://pubs.acs.org/doi/10.1021/acsaelm.4c01287 |
Abstract | Understanding the sensing mechanism and the structure-property relationship of self-powered, ultrasensitive photodetectors and temperature sensors is essential for their development. In this study, we report the thermo-phototronic effect observed in double semiconductor heterostructures capable of light harvesting and ultrasensitive temperature sensing. To demonstrate the advances of using the double heterostructure, we conducted a comparative study with a single heterostructure of highly doped n-3C-SiC/p-Si to understand the light harvesting capability and sensing performance. Our results show that the double n-3C-SiC/p-Si heterostructure outperformed the single counterpart in both photovoltage generation and sensitivity, confirming that the structural design significantly impacts the sensing performance of the devices. Under 7.5 mW/cm2 illumination, the measured voltage in the double structure changed by 21 mV under a 0.2 K temperature gradient, corresponding to an ultrahigh sensitivity of 110 mV/K. This sensitivity is more than 300 times higher than that of 0.3 mV/K observed in the single heterostructure. The underlying physics is attributed to the structural design of the double n-3C-SiC/p-Si heterostructure that controls charge carrier diffusion from the illuminated electrode to the other, resulting in a high photovoltage. These findings demonstrate that using the double n-3C-SiC/p-Si heterostructures can significantly enhance the sensitivity compared with using the single heterostructures, thereby contributing significantly to the development of self-powered photodetectors and temperature sensors. © 2024 American Chemical Society. |
Keywords | double junction; thermo-phototronic; photodetector; temperature sensor; silicon carbide heterostructure; microsensors; temperature gradient |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 400803. Electrical energy generation (incl. renewables, excl. photovoltaics) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Centre for Future Materials |
School of Engineering | |
Griffith University |
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