Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film
Article
Article Title | Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film |
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ERA Journal ID | 8144 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Dao, Dzung Viet (Author), Han, Jisheng (Author), Iacopi, Alan (Author), Dinh, Toan (Author), Phan, Hoang-Phuong (Author) and Dimitrijev, Sima (Author) |
Journal Title | Key Engineering Materials |
Journal Citation | 733, pp. 3-7 |
Number of Pages | 5 |
Year | 2017 |
Place of Publication | Stafa-Zurich, Switzerland |
ISSN | 1013-9826 |
Digital Object Identifier (DOI) | https://doi.org/10.4028/www.scientific.net/KEM.733.3 |
Web Address (URL) | https://www.scientific.net/KEM.733.3 |
Abstract | This article reports the first results on stress induced pseudo-Hall effect in single crystal n-type 3C-SiC(100) grown by LPCVD process. After the growth process, Hall devices were fabricated by standard photolithography and dry etching processes. The bending beam method was employed to study the stress induced changes in the electrical response of the fabricated Hall devices. It has been observed that when stress is applied to the 3C-SiC(100) Hall devices, the offset voltage of the Hall devices varies linearly with the applied compressive and tensile stresses which is called, the pseudo-Hall effect. The variation of the offset voltage of these Hall devices is also proportional to the applied input current. This variation of the offset voltage with the applied compressive and tensile stresses shows that single crystal n-type 3C-SiC(100) can be used for stress sensing applications. |
Keywords | Pseudo-Hall effect, single crystal n-type 3C-SiC, thin film, strain effect |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Byline Affiliations | Griffith University |
Event | 2016 International Conference on Nanotechnology Nanomaterials in Energy (ICNNE 2016) |
Event Details | 2016 International Conference on Nanotechnology Nanomaterials in Energy (ICNNE 2016) Event Date 02 to end of 04 Jun 2016 Event Location Paris, France |
https://research.usq.edu.au/item/q5q37/pseudo-hall-effect-in-single-crystal-n-type-3c-sic-100-thin-film
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