Utilizing large hall offset voltage for conversion free 4H SiC strain sensor
Paper
Paper/Presentation Title | Utilizing large hall offset voltage for conversion free 4H SiC strain sensor |
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Presentation Type | Paper |
Authors | Nguyen, Tuan-Khoa (Author), Phan, Hoang-Phuong (Author), Han, Jisheng (Author), Dinh, Toan (Author), Foisal, Abu Riduan Md (Author), Zhu, Yong (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal or Proceedings Title | 2018 IEEE Micro Electro Mechanical Systems (MEMS) |
ERA Conference ID | 72370 |
Number of Pages | 4 |
Year | 2018 |
Place of Publication | Piscataway, United States |
ISBN | 9781538647820 |
Digital Object Identifier (DOI) | https://doi.org/10.1109/MEMSYS.2018.8346697 |
Web Address (URL) of Paper | https://ieeexplore.ieee.org/document/8346697 |
Conference/Event | 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018) |
IEEE International Conference on Micro Electro Mechanical Systems (MEMS) | |
Event Details | 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018) Event Date 21 to end of 25 Jan 2018 Event Location Belfast, Northern Ireland |
Event Details | IEEE International Conference on Micro Electro Mechanical Systems (MEMS) MEMS |
Abstract | This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large offset voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio. |
Keywords | Capacitive sensors, Strain, Silicon carbide,Sensitivity, Temperature sensors, Monitoring |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q2y/utilizing-large-hall-offset-voltage-for-conversion-free-4h-sic-strain-sensor
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