The piezoresistive effect in top-down fabricated p-type 3C-SiC nanowires
Article
Article Title | The piezoresistive effect in top-down fabricated p-type 3C-SiC nanowires |
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ERA Journal ID | 4425 |
Article Category | Article |
Authors | Phan, Hoang-Phuong (Author), Dinh, Toan (Author), Kozeki, Takahiro (Author), Nguyen, Tuan-Khoa (Author), Qamar, Afzaal (Author), Namazu, Takahiro (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | IEEE Electron Device Letters |
Journal Citation | 37 (8), pp. 1029-1032 |
Article Number | 7488279 |
Number of Pages | 4 |
Year | 2015 |
Place of Publication | Piscataway, NJ, United States |
ISSN | 0741-3106 |
1558-0563 | |
Digital Object Identifier (DOI) | https://doi.org/10.1109/LED.2016.2579020 |
Web Address (URL) | http://www.scopus.com/inward/record.url?eid=2-s2.0-84980320648&partnerID=MN8TOARS |
Abstract | This letter reports on the piezoresistive effect of top-down fabricated 3C-SiC nanowires (NWs). Focused ion beam was utilized to create p-type 3C-SiC NWs from a 3C-SiC thin film with a carrier concentration of 5 × 10 18 cm -3 epitaxially grown on a Si substrate. The as-fabricated NWs were then subjected to tensile strains varying from 0 to 280 με. Experimental data showed that the p-type 3C-SiC NWs possess a large gauge factor of 35, which is at least one order of magnitude larger than that of other hard materials, such as carbon nanotubes and graphene. This large gauge factor and the linear relationship between the relative resistance change and the applied strain in the SiC NWs indicate their potential for nanoelectromechanical systems sensing applications. |
Keywords | silicon carbide, piezoresistive effect, nanowires, NEMS sensors, focused ion beam |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
400899. Electrical engineering not elsewhere classified | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Aichi Institute of Technology, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q52/the-piezoresistive-effect-in-top-down-fabricated-p-type-3c-sic-nanowires
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