Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure
Article
Article Title | Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure |
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ERA Journal ID | 40638 |
Article Category | Article |
Authors | Nguyen, Thanh (Author), Dinh, Toan (Author), Bell, John (Author), Nguyen, Nam-Trung (Author) and Dao, Viet Dzung (Author) |
Journal Title | ACS Applied Materials and Interfaces |
Journal Citation | 14, pp. 22593-22600 |
Number of Pages | 8 |
Year | 2022 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 1944-8244 |
1944-8252 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsami.2c01681 |
Web Address (URL) | https://pubs.acs.org/doi/full/10.1021/acsami.2c01681 |
Abstract | Utilizing harvesting energy to power sensors has been becoming more critical in the current age of the Internet of Things. In this paper, we propose a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy to power itself and simultaneously sense the surrounding temperature. The 3C-SiC/Si heterostructure converts photon energy into electrical energy, which is manifested as a lateral photovoltage across the top material layer of the heterostructure. Simultaneously, the lateral photovoltage varies with the surrounding temperature, and this photovoltage variation with temperature is used to monitor the temperature. We characterized the thermoresistive properties of the 3C-SiC/Si heterostructure, evaluated its energy conversion, and investigated its performance as a light-harvesting self-powered temperature sensor. The resistance of the heterostructure gradually drops with increasing temperature with a temperature coefficient of resistance (TCR) ranging from more than −3500 to approximately −8200 ppm/K. The generated lateral photovoltage is as high as 58.8 mV under 12 700 lx light illumination at 25 °C. The sensitivity of the sensor in the self-power mode is as high as 360 μV·K–1 and 330 μV·K–1 under illumination of 12 700 lx and 7400 lx lights, respectively. The sensor harvests photon energy to power itself and measure temperatures as high as 300 °C, which is impressive for semiconductor-based sensor. The proposed technology opens new avenues for energy harvesting self-powered temperature sensors. |
Keywords | lateral photovoltaic effect; light harvesting; monolithic structure; self-powered sensor; silicon carbide; temperature sensors |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | School of Engineering |
Griffith University | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q76qw/light-harvesting-self-powered-monolithic-structure-temperature-sensing-based-on-3c-sic-si-heterostructure
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