ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
Article
Article Title | ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices |
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ERA Journal ID | 949 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Phan, Hoang-Phuong (Author), Dinh, Toan (Author), Nguyen, Nam-Trung (Author) and Rais-Zadeh, Mina (Author) |
Journal Title | Applied Physics Letters |
Journal Citation | 116 (13) |
Article Number | 132902 |
Number of Pages | 6 |
Year | 2020 |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/5.0004943 |
Web Address (URL) | https://aip.scitation.org/doi/10.1063/5.0004943 |
Abstract | This paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band rejection as high as 18 dB are demonstrated using the excellent piezoelectric properties of ScAlN and low acoustic loss of 3C-SiC. Additionally, a large piezoresistive effect in the low-doped n-type 3C-SiC(100) thin film has been observed, which exceeds the previously reported values in any SiC thin films. The growth of the n-type 3C-SiC thin film was performed using the low pressure chemical vapor deposition technique at 1250 °C and the standard micro-electro-mechanical systems process is used for the fabrication of 3C-SiC piezoresistors. The piezoresistive effect was measured using the bending beam method in different crystallographic orientations. The maximum gauge factor is –47 for the longitudinal [100] orientation. Using the longitudinal and transverse gauge factors for different crystallographic orientations, the fundamental piezoresistive coefficients of the low-doped n-type 3C-SiC thin film are measured to be π11=(−14.5±1.3)×10−11 Pa−1, π12=(5.5±0.5)×10−11 Pa−1, and π44=(−1.7±0.7)×10−11 Pa−1. |
Keywords | Acoustic surface wave devices; Acoustic waves; Aluminum compounds; Electromechanical coupling; Electromechanical devices; Gages; MEMS; Monolithic integrated circuits; Piezoelectricity; Silicon; Silicon carbide; Silicon compounds; Thin films; Vapor deposition |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | University of Michigan, United States |
Griffith University | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w6x/scaln-3c-sic-si-platform-for-monolithic-integration-of-highly-sensitive-piezoelectric-and-piezoresistive-devices
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