Ultrasensitive Self-Powered Position-Sensitive Detector Based on n‑3C-SiC/p-Si Heterojunctions
Article
Article Title | Ultrasensitive Self-Powered Position-Sensitive Detector Based on n‑3C-SiC/p-Si Heterojunctions |
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ERA Journal ID | 211582 |
Article Category | Article |
Authors | Nguyen, Tuan-Hung (Author), Nguyen, Thanh (Author), Foisal, Abu Riduan Md (Author), Pham, Tuan Anh (Author), Dinh, Toan (Author), Streed, Erik W. (Author), Vu, Trung-Hieu (Author), Fastier-Wooller, Jarred (Author), Duran, Pablo Guzman (Author), Dau, Van Thanh (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | ACS Applied Electronic Materials |
Journal Citation | 4 (2), pp. 768-775 |
Number of Pages | 8 |
Year | 2022 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 2637-6113 |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsaelm.1c01156 |
Web Address (URL) | https://pubs.acs.org/doi/full/10.1021/acsaelm.1c01156 |
Abstract | Cubic silicon carbide (3C-SiC) on silicon (Si) is an excellent platform for developing sensors that can function in a harsh environment due to its superior mechanical, electrical, chemical, optoelectronic properties and low wafer cost. Here, we report a position-sensitive detector (PSD) based on the heterojunction formed between n-type SiC and p-type Si. The PSD utilizes the lateral photovoltaic effect (LPE) with a linear dependence of LPE on laser spot positions. The position sensitivity is found to be 554.82 mV/mm at zero bias conditions under an illumination of 200 μW (637 nm), which is among the most sensitive LPE-based PSDs to date. The generation of the lateral photovoltage (LPV) under light illumination is investigated by examining the band diagram of the 3C-SiC/Si heterojunction. The influence of the illumination intensity and wavelength on the position sensitivity is also explained. This work demonstrates a potential application for ultrasensitive, self-powered optoelectronic sensing of the n-3C-SiC/p-Si platform. |
Keywords | 3C-SiC/Si; lateral photovoltaic effect; optoelectronic; position-sensitive detector; self-powered |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
School of Engineering | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q75w6/ultrasensitive-self-powered-position-sensitive-detector-based-on-n-3c-sic-p-si-heterojunctions
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