Isotropic piezoresistance of p-type 4H-SiC in (0001) plane

Isotropic piezoresistance of p-type 4H-SiC in (0001) plane

In this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by means of the hole energy shift calculation and the coordinate transformation. These results were also confirmed by the measurement of the piezoresistance using a bending beam method. The fundamental longitudinal and transverse piezoresistive coefficients π11 and π12 were found to be 6.43 × 10−11 Pa−1 and −5.12 × 10−11 Pa−1, respectively. The isotropy of the piezoresistance in the basal plane of p-type 4H-SiC is attributed to the isotropic hole energy shift under uniaxial strain. This interesting phenomenon in p-type 4H-SiC is promising for the design and fabrication of mechanical sensors and strain-engineered electronics since high sensitivity and consistent performance can be achieved regardless of the crystallographic orientation.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 113, 012104 (2018) and may be found at https://doi.org/10.1063/1.5037545.