Single-crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high-temperature electronics and bioapplications
Article
Article Title | Single-crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high-temperature electronics and bioapplications |
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ERA Journal ID | 40638 |
Article Category | Article |
Authors | Phan, Hoang-Phuong (Author), Cheng, Han-Hao (Author), Dinh, Toan (Author), Wood, Barry (Author), Nguyen, Tuan-Khoa (Author), Mu, Fengwen (Author), Kamble, Harshad (Author), Vadivelu, Raja (Author), Walker, Glenn (Author), Hold, Leonie (Author), Iacopi, Alan (Author), Haylock, Ben (Author), Dao, Dzung Viet (Author), Lobino, Mirko (Author), Suga, Tadatomo (Author) and Nguyen, Nam-Trung (Author) |
Journal Title | ACS Applied Materials and Interfaces |
Journal Citation | 9 (23), pp. 27365-27371 |
Number of Pages | 7 |
Year | 2017 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 1944-8244 |
1944-8252 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsami.7b06661 |
Web Address (URL) | https://pubs.acs.org/doi/abs/10.1021/acsami.7b06661 |
Abstract | Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from −12 000 to −20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications. |
Keywords | ilicon carbide; anodic bonding; MEMS; harsh environment electronics; bioapplications |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
University of Queensland | |
University of Tokyo, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q3y/single-crystalline-3c-sic-anodically-bonded-onto-glass-an-excellent-platform-for-high-temperature-electronics-and-bioapplications
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