Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices
Article
Article Title | Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices |
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ERA Journal ID | 201060 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Dao, Dzung Viet (Author), Han, Jisheng (Author), Phan, Hoang-Phuong (Author), Younis, Adnan (Author), Tanner, Philip (Author), Dinh, Toan (Author), Wang, Li (Author) and Dimitrijev, Sima (Author) |
Journal Title | Journal of Materials Chemistry C |
Journal Citation | 3 (48), pp. 12394-12398 |
Number of Pages | 5 |
Year | 2015 |
Publisher | The Royal Society of Chemistry |
Place of Publication | Cambridge, United Kingdom |
ISSN | 2050-7526 |
2050-7534 | |
Digital Object Identifier (DOI) | https://doi.org/10.1039/c5tc02984h |
Web Address (URL) | https://pubs.rsc.org/en/content/articlelanding/2015/TC/C5TC02984H#!divAbstract |
Abstract | This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in [110] and [11[2 with combining macron]] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111). |
Keywords | Pseudo-Hall effect, terminal devices |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | ©The Royal Society of Chemistry 2015. Permanent restricted access to Published version in accordance with the copyright policy of the publisher. |
Byline Affiliations | Griffith University |
University of New South Wales | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q5v/pseudo-hall-effect-in-single-crystal-3c-sic-111-four-terminal-devices
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