3C-SiC/Si Heterostructure: An excellent platform for position-sensitive detectors based on photovoltaic effect
Article
Article Title | 3C-SiC/Si Heterostructure: An excellent platform for position-sensitive detectors based on photovoltaic effect |
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ERA Journal ID | 40638 |
Article Category | Article |
Authors | Foisal, Abu Riduan Md, Nguyen, Thanh, Dinh, Toan, Nguyen, Tuan-Khoa, Tanner, Philip, Streed, Erik W. and Dao, Dzung Viet |
Journal Title | ACS Applied Materials and Interfaces |
Journal Citation | 11 (43), pp. 40980-40987 |
Number of Pages | 8 |
Year | 2019 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 1944-8244 |
1944-8252 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsami.9b15855 |
Web Address (URL) | https://pubs.acs.org/doi/10.1021/acsami.9b15855 |
Abstract | Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependence on spot positions, and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm2 (635 nm). The structure also exhibits a linear dependence of the LPE over a large distance (7 mm) between two electrodes, which is crucial for PSDs as the region with a linear dependence of LPE is only usable for PSDs. The LPE at different spot positions and under different illumination conditions have been investigated and explained based on the energy-band analysis. The temperature dependence of the LPE and position sensitivity is also investigated. Furthermore, the two-dimensional mapping of the lateral photovoltages reveals the potential for utilizing the 3C-SiC/Si heterostructure to detect the laser spot position precisely on a plane. |
Keywords | 3C-SiC/Si heterostructure; position detector; lateral photovoltaic effect; energy-band analysis; harsh environments |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q06/3c-sic-si-heterostructure-an-excellent-platform-for-position-sensitive-detectors-based-on-photovoltaic-effect
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