Strain effect in highly-doped n-Type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement
Article
Article Title | Strain effect in highly-doped n-Type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement |
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ERA Journal ID | 1128 |
Article Category | Article |
Authors | Phan, Hoang-Phuong (Author), Nguyen, Tuan-Khoa (Author), Dinh, Toan (Author), Cheng, Han‐Hao (Author), Mu, Fengwen (Author), Iacopi, Alan (Author), Hold, Leonie (Author), Dao, Dzung Viet (Author), Suga, Tadatomo (Author), Senesky, Debbie G. (Author) and Nguyen, Nam‐Trung (Author) |
Journal Title | Physica Status Solidi A: Applications and Materials Science |
Journal Citation | 215 (24) |
Article Number | 1800288 |
Number of Pages | 6 |
Year | 2018 |
Place of Publication | Germany |
ISSN | 1862-6300 |
1862-6319 | |
Digital Object Identifier (DOI) | https://doi.org/10.1002/pssa.201800288 |
Web Address (URL) | https://onlinelibrary.wiley.com/doi/epdf/10.1002/pssa.201800288 |
Abstract | This work reports the strain effect on the electrical properties of highly doped n‐type single crystalline cubic silicon carbide (3C‐SiC) transferred onto a 6‐inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C‐SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n‐type 3C‐SiC. Our finding for the large gauge factor in n‐type 3C‐SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC‐on‐glass based MEMS applications. |
Keywords | MEMS; piezoresistance; silicon carbide; strain engineering; wafer bonding |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
University of Queensland | |
University of Tokyo, Japan | |
Stanford University, United States | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q29/strain-effect-in-highly-doped-n-type-3c-sic-on-glass-substrate-for-mechanical-sensors-and-mobility-enhancement
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