Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Article
Mai, Thi Ngoc Anh, Hossain, Md Shakhawath, Nguyen, Nhat Minh, Chen, Yongliang, Chen, Chaohao, Xu, Xiaoxue, Trinh, Quang Thang, Dinh, Toan and Tran, Toan Trong. 2025. "Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications." Advanced Functional Materials. https://doi.org/10.1002/adfm.202500714
| Article Title | Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications |
|---|---|
| ERA Journal ID | 1397 |
| Article Category | Article |
| Authors | Mai, Thi Ngoc Anh, Hossain, Md Shakhawath, Nguyen, Nhat Minh, Chen, Yongliang, Chen, Chaohao, Xu, Xiaoxue, Trinh, Quang Thang, Dinh, Toan and Tran, Toan Trong |
| Journal Title | Advanced Functional Materials |
| Article Number | 2500714 |
| Number of Pages | 22 |
| Year | 2025 |
| Publisher | John Wiley & Sons |
| Place of Publication | Germany |
| ISSN | 1616-301X |
| 1616-3028 | |
| Digital Object Identifier (DOI) | https://doi.org/10.1002/adfm.202500714 |
| Web Address (URL) | https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202500714 |
| Abstract | Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional (2D) lattice of the material formed by the extremely strong B─N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science. |
| Keywords | defect centers; Quantum Emitters |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401605. Functional materials |
| Byline Affiliations | University of Technology Sydney |
| University of Hong Kong, China | |
| Australian National University | |
| Griffith University | |
| School of Engineering | |
| Centre for Future Materials |
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