Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
Article
Article Title | Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration |
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ERA Journal ID | 949 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Dao, Dzung (Author), Dinh, Toan (Author), Iacopi, Alan (Author), Walker, Glenn (Author), Phan, Hoang-Phuong (Author), Hold, Leonie (Author) and Dimitrijev, Sima (Author) |
Journal Title | Applied Physics Letters |
Journal Citation | 110 (16) |
Article Number | 162903 |
Number of Pages | 6 |
Year | 2017 |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4980849 |
Web Address (URL) | https://aip.scitation.org/doi/pdf/10.1063/1.4980849 |
Abstract | This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (–29 ± 1.3) × 10−11 Pa−1, P12 = (11.06 ± 0.5)× 10−11 Pa−1, and P44 = (–3.4 ± 0.7) × 10−11 Pa−1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC. |
Keywords | Silicon-carbide; stress |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q34/piezo-hall-effect-and-fundamental-piezo-hall-coefficients-of-single-crystal-n-type-3c-sic-100-with-low-carrier-concentration
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