Formation of silicon carbide nanowire on insulator through direct wet oxidation
Article
Article Title | Formation of silicon carbide nanowire on insulator through direct wet oxidation |
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ERA Journal ID | 1005 |
Article Category | Article |
Authors | Phan, Hoang-Phuong (Author), Ina, Ginnosuke (Author), Dinh, Toan (Author), Kozeki, Takahiro (Author), Nguyen, Tuan-Khoa (Author), Namazu, Takahiro (Author), Qamar, Afzaal (Author), Dao, Dzung Viet (Author) and Nguyen, Nam-Trung (Author) |
Journal Title | Materials Letters |
Journal Citation | 196, pp. 280-283 |
Number of Pages | 4 |
Year | 2017 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 0167-577X |
1873-4979 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.matlet.2017.03.118 |
Web Address (URL) | https://www.sciencedirect.com/science/article/abs/pii/S0167577X17304688 |
Abstract | Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO2) by using silicon wet-thermal-oxidation. Experimental data confirmed that SiO2 was successfully formed underneath of 300 nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications. |
Keywords | Silicon carbide; SiC on insulator; SiC nanowires; Nanowires waveguides; LOCOS; MEMS |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Aichi Institute of Technology, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q33/formation-of-silicon-carbide-nanowire-on-insulator-through-direct-wet-oxidation
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