AlGaN/GaN 2-D electron gas for highly sensitive and high-temperature current sensing
Article
Article Title | AlGaN/GaN 2-D electron gas for highly sensitive and high-temperature current sensing |
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ERA Journal ID | 4451 |
Article Category | Article |
Authors | Nguyen, Hong Quan (Author), Dinh, Toan (Author), Moghadam, Hamid Amini (Author), Nguyen, Tuan Khoa (Author), Nguyen, Thanh (Author), Han, Jisheng (Author), Dimitrijev, Sima (Author), Zhu, Yong (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | IEEE Transactions on Electron Devices |
Journal Citation | 68 (4), pp. 1495-1500 |
Article Number | 9360320 |
Number of Pages | 6 |
Year | 2021 |
Place of Publication | United States |
ISSN | 0018-9383 |
1557-9646 | |
Digital Object Identifier (DOI) | https://doi.org/10.1109/TED.2021.3054360 |
Web Address (URL) | https://ieeexplore.ieee.org/abstract/document/9360320 |
Abstract | This article presents the design and characterization of a direct current (dc) sensor utilizing the Hall effect in AlGaN/GaN 2-D electron gas (2DEG) four-terminal devices and a flux concentrator. The sensor was fabricated from an AlGaN/GaN/Si wafer grown by metal-organic chemical vapor deposition. The sensor exhibited excellent linearity and repeatability with a high Hall voltage under the primary current ranging from −5 to 5 A. The sensitivity of the sensor was measured to be 0.26 (V/A)/A at 20 °C and independent of ambient temperature up to 200 °C. The obtained result is greater than that of other reported Hall effect-based current sensors. The high sensitivity and thermal stability at varying temperatures are attributed to the high electron mobility, wide bandgap, and stability of carrier density in 2DEG. Combining these factors with the excellent mechanical strength, electrical conductivity, and chemical inertness of GaN, the proposed sensor is promising for current monitoring in a wide range of operation temperatures. |
Keywords | AlGaN/GaN 2-D electron gas (2DEG), current sensor, energy band analysis, Hall effect |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q649w/algan-gan-2-d-electron-gas-for-highly-sensitive-and-high-temperature-current-sensing
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