Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress
Article
Article Title | Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress |
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ERA Journal ID | 4425 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Tanner, Philip (Author), Dao, Dzung Viet (Author), Phan, Hoang-Phuong (Author) and Dinh, Toan (Author) |
Journal Title | IEEE Electron Device Letters |
Journal Citation | 35 (12), pp. 1293-1295 |
Article Number | 6932451 |
Number of Pages | 3 |
Year | 2014 |
Place of Publication | United States |
ISSN | 0741-3106 |
1558-0563 | |
Digital Object Identifier (DOI) | https://doi.org/10.1109/LED.2014.2361359 |
Web Address (URL) | https://ieeexplore.ieee.org/document/6932451 |
Abstract | The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow in the heterojunction is due to tunneling through the triangular potential barrier formed due to valence band offset between Si and SiC. The applied stress produces small changes in tunneling current when stress is increased from 0 to 308 MPa. The observed increase in current at 0.24 V is 10% at maximum stress of 308 MPa. The increase of tunneling current when applying stress is explained in terms of stress, which alters the out-of-plane effective mass, and the effective tunneling barrier height of holes in top subbands of p-type Si. |
Keywords | p-type 3C-SiC/Si heterojunction, tunnelling current, strain induced effects |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
400899. Electrical engineering not elsewhere classified | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q60/electrical-properties-of-p-type-3c-sic-si-heterojunction-diode-under-mechanical-stress
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