Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification
Article
Article Title | Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification |
---|---|
ERA Journal ID | 949 |
Article Category | Article |
Authors | Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Dinh, Toan, Ina, Ginnosuke, Kermany, Atieh Ranjbar, Qamar, Afzaal, Han, Jisheng, Namazu, Takahiro, Maeda, Ryutaro, Dao, Dzung Viet and Nguyen, Nam-Trung |
Journal Title | Applied Physics Letters |
Journal Citation | 110 (14) |
Article Number | 141906 |
Number of Pages | 5 |
Year | 2017 |
Publisher | AIP Publishing |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4979834 |
Web Address (URL) | https://pubs.aip.org/aip/apl/article-abstract/110/14/141906/594212/Ultra-high-strain-in-epitaxial-silicon-carbide?redirectedFrom=fulltext |
Abstract | Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors. |
Keywords | Layer black phosphorus; performance; graphene; resonators; dependence; systems |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 110, 141906 (2017) and may be found at https://doi.org/10.1063/1.4979834. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Aichi Institute of Technology, Japan | |
National Institute of Advanced Industrial Science and Technology, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q45/ultra-high-strain-in-epitaxial-silicon-carbide-nanostructures-utilizing-residual-stress-amplification
Download files
138
total views13
total downloads2
views this month1
downloads this month