Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification
Article
Article Title | Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification |
---|---|
ERA Journal ID | 949 |
Article Category | Article |
Authors | Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Dinh, Toan, Ina, Ginnosuke, Kermany, Atieh Ranjbar, Qamar, Afzaal, Han, Jisheng, Namazu, Takahiro, Maeda, Ryutaro, Dao, Dzung Viet and Nguyen, Nam-Trung |
Journal Title | Applied Physics Letters |
Journal Citation | 110 (14) |
Article Number | 141906 |
Number of Pages | 5 |
Year | 2017 |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4979834 |
Web Address (URL) | http://www.scopus.com/inward/record.url?eid=2-s2.0-85017131335&partnerID=MN8TOARS |
Abstract | Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors. |
Keywords | Layer black phosphorus; performance; graphene; resonators; dependence; systems |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Aichi Institute of Technology, Japan | |
National Institute of Advanced Industrial Science and Technology, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q45/ultra-high-strain-in-epitaxial-silicon-carbide-nanostructures-utilizing-residual-stress-amplification
109
total views8
total downloads0
views this month0
downloads this month