The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C-SiC(100) four terminal devices
Article
Article Title | The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C-SiC(100) four terminal devices |
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ERA Journal ID | 201060 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Phan, Hoang-Phuong (Author), Han, Jisheng (Author), Tanner, Philip (Author), Dinh, Toan (Author), Wang, Li (Author), Dimitrijev, Sima (Author) and Dao, Dzung Viet (Author) |
Journal Title | Journal of Materials Chemistry C |
Journal Citation | 3 (34), pp. 8804-8809 |
Number of Pages | 6 |
Year | 2015 |
Publisher | The Royal Society of Chemistry |
Place of Publication | Cambridge, United Kingdom |
ISSN | 2050-7526 |
2050-7534 | |
Digital Object Identifier (DOI) | https://doi.org/10.1039/c5tc01898f |
Web Address (URL) | http://www.scopus.com/inward/record.url?eid=2-s2.0-84939824054&partnerID=MN8TOARS |
Abstract | This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent offset voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1. |
Keywords | terminal devices |
ANZSRC Field of Research 2020 | 340699. Physical chemistry not elsewhere classified |
401705. Microelectromechanical systems (MEMS) | |
401605. Functional materials | |
Public Notes | ©The Royal Society of Chemistry 2015. Permanent restricted access to Published version in accordance with the copyright policy of the publisher. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q5x/the-effect-of-device-geometry-and-crystal-orientation-on-the-stress-dependent-offset-voltage-of-3c-sic-100-four-terminal-devices
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