Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects
Article
Article Title | Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects |
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ERA Journal ID | 949 |
Article Category | Article |
Authors | Phan, Hoang-Phuong (Author), Dinh, Toan (Author), Kozeki, Takahiro (Author), Nguyen, Tuan-Khoa (Author), Qamar, Afzaal (Author), Namazu, Takahiro (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | Applied Physics Letters |
Journal Citation | 109 (12) |
Article Number | 123502 |
Number of Pages | 5 |
Year | 2016 |
Publisher | AIP Publishing |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4963258 |
Web Address (URL) | https://aip.scitation.org/doi/10.1063/1.4963258 |
Abstract | This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications. |
Keywords | Field-effect transistors; silicon nanowires; thin-films; sensors; stress |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 109, 123502 (2016) and may be found at https://doi.org/10.1063/1.4963258. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Aichi Institute of Technology, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q4x/nano-strain-amplifier-making-ultra-sensitive-piezoresistance-in-nanowires-possible-without-the-need-of-quantum-and-surface-charge-effects
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