Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode
Article
Article Title | Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode |
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ERA Journal ID | 123129 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Dao, Dzung Viet (Author), Tanner, Philip (Author), Phan, Hoang-Phuong (Author), Dinh, Toan (Author) and Dimitrijev, Sima (Author) |
Journal Title | Applied Physics Express |
Journal Citation | 8 (5), pp. 061302-1 |
Number of Pages | 3 |
Year | 2015 |
Place of Publication | United Kingdom |
ISSN | 1882-0778 |
1882-0786 | |
Digital Object Identifier (DOI) | https://doi.org/10.7567/APEX.8.061302 |
Web Address (URL) | https://iopscience.iop.org/article/10.7567/APEX.8.061302 |
Abstract | This article reports for the first time the electrical properties of fabricated n-3C-SiC/p-Si heterojunction diodes under external mechanical stress in the [110] direction. An anisotype heterojunction diode of n-3C-SiC/p-Si was fabricated by depositing 3C-SiC onto the Si substrate by low-pressure chemical vapor deposition. The mechanical stress significantly affected the scaling current density of the heterojunction. The scaling current density increases with stress and is explained in terms of a band offset reduction at the SiC/Si interface under applied stress. A reduction in the barrier height across the junction owing to applied stress is also explained quantitatively. |
Keywords | Applied stress; Band offsets; Barrier heights; Heterojunction diodes; Mechanical stress; Si substrates; SiC/Si interface; [110] direction |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
510399. Classical physics not elsewhere classified | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q58/influence-of-external-mechanical-stress-on-electrical-properties-of-single-crystal-n-3c-sic-p-si-heterojunction-diode
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