High thermosensitivity of silicon nanowires induced by amorphization
Article
Article Title | High thermosensitivity of silicon nanowires induced by amorphization |
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ERA Journal ID | 1005 |
Article Category | Article |
Authors | Dinh, Toan (Author), Phan, Hoang-Phuong (Author), Kozehi, Takahiro (Author), Qamar, Afzaal (Author), Fujii, Tatsuya (Author), Namazu, Takahiro (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | Materials Letters |
Journal Citation | 177, pp. 80-84 |
Number of Pages | 5 |
Year | 2016 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 0167-577X |
1873-4979 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.matlet.2016.04.171 |
Web Address (URL) | https://www.sciencedirect.com/science/article/abs/pii/S0167577X16306693 |
Abstract | In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from −8000 ppm/K to −12,000 ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110 meV between silicon crystallites in the poly crystalline SiNWs. |
Keywords | Thermoresistive effect; Temperature coefficient of resistance; Silicon nanowire; Amorphization; Focused ion beam |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | File reproduced in accordance with the copyright policy of the publisher/author. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q4w/high-thermosensitivity-of-silicon-nanowires-induced-by-amorphization
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