High thermosensitivity of silicon nanowires induced by amorphization
Article
| Article Title | High thermosensitivity of silicon nanowires induced by amorphization |
|---|---|
| ERA Journal ID | 1005 |
| Article Category | Article |
| Authors | Dinh, Toan (Author), Phan, Hoang-Phuong (Author), Kozehi, Takahiro (Author), Qamar, Afzaal (Author), Fujii, Tatsuya (Author), Namazu, Takahiro (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
| Journal Title | Materials Letters |
| Journal Citation | 177, pp. 80-84 |
| Number of Pages | 5 |
| Year | 2016 |
| Publisher | Elsevier |
| Place of Publication | Netherlands |
| ISSN | 0167-577X |
| 1873-4979 | |
| Digital Object Identifier (DOI) | https://doi.org/10.1016/j.matlet.2016.04.171 |
| Web Address (URL) | https://www.sciencedirect.com/science/article/abs/pii/S0167577X16306693 |
| Abstract | In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from −8000 ppm/K to −12,000 ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110 meV between silicon crystallites in the poly crystalline SiNWs. |
| Keywords | Thermoresistive effect; Temperature coefficient of resistance; Silicon nanowire; Amorphization; Focused ion beam |
| ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
| Public Notes | File reproduced in accordance with the copyright policy of the publisher/author. |
| Byline Affiliations | Griffith University |
| University of Hyogo, Japan | |
| Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q4w/high-thermosensitivity-of-silicon-nanowires-induced-by-amorphization
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