Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high-temperature MEMS thermal-based sensors
Article
Article Title | Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high-temperature MEMS thermal-based sensors |
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ERA Journal ID | 201472 |
Article Category | Article |
Authors | Dinh, Toan (Author), Phan, Hoang-Phuong (Author), Kozeki, Takahiro (Author), Qamar, Afzaal (Author), Namazu, Takahiro (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | RSC Advances: an international journal to further the chemical sciences |
Journal Citation | 5 (128), pp. 106083-106086 |
Number of Pages | 4 |
Year | 2015 |
Publisher | The Royal Society of Chemistry |
Place of Publication | United Kingdom |
ISSN | 2046-2069 |
Digital Object Identifier (DOI) | https://doi.org/10.1039/c5ra20289b |
Web Address (URL) | https://pubs.rsc.org/en/content/articlelanding/2015/ra/c5ra20289b |
Abstract | We report for the first time the thermoresistive property of p-type single crystalline 3C-SiC (p-3C-SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique. A negative and relatively large temperature coefficient of resistance (TCR) up to -5500 ppm K-1 was observed. This TCR is attributed to two activation energy thresholds of 45meV and 52 meV, corresponding to temperatures below and above 450 K, respectively, and a small reduction of hole mobility with increasing temperature. The large TCR indicates the suitability of p-3C-SiC for thermal-based sensors working in high-temperature environments. |
Keywords | sensors, stresses, stress sensors, activation energy, epitaxial growth, hole mobility, ion beams, silicon carbide, silicon wafers, substrates |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
510399. Classical physics not elsewhere classified | |
Public Notes | File reproduced in accordance with the copyright policy of the publisher/author. |
Byline Affiliations | Griffith University |
University of Hyogo, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q5z/thermoresistive-properties-of-p-type-3c-sic-nanoscale-thin-films-for-high-temperature-mems-thermal-based-sensors
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