A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications
Article
Article Title | A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications |
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ERA Journal ID | 1005 |
Article Category | Article |
Authors | Qamar, Afzaal (Author), Dinh, Toan (Author), Jafari, Mohsen (Author), Iacopi, Alan (Author), Dimitrijev, Sima (Author) and Dao, Dzung Viet (Author) |
Journal Title | Materials Letters |
Journal Citation | 213, pp. 11-14 |
Number of Pages | 4 |
Year | 2018 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 0167-577X |
1873-4979 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.matlet.2017.10.117 |
Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S0167577X17315938 |
Abstract | The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors. |
Keywords | 3C-SiC, piezoresistive effect, pseudo-Hall effect |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | University of Michigan, United States |
Griffith University | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5q1q/a-large-pseudo-hall-effect-in-n-type-3c-sic-1-0-0-and-its-dependence-on-crystallographic-orientation-for-stress-sensing-applications
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