Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures
Article
Article Title | Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures |
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ERA Journal ID | 4508 |
Article Category | Article |
Authors | Pham, Tuan Anh (Author), Hold, Leonie (Author), Iacopi, Alan (Author), Nguyen, Tuan-Khoa (Author), Cheng, Han Hao (Author), Dinh, Toan (Author), Dao, Dzung Viet (Author), Ta, Hang Thu (Author), Nguyen, Nam-Trung (Author) and Phan, Hoang‐Phuong (Author) |
Journal Title | Sensors and Actuators A: Physical |
Journal Citation | 317, pp. 1-11 |
Article Number | 112474 |
Number of Pages | 11 |
Year | 2021 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 0924-4247 |
1873-3069 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.sna.2020.112474 |
Web Address (URL) | https://www.sciencedirect.com/science/article/abs/pii/S0924424720317891 |
Abstract | An in-depth understanding of the formation of silicon dioxide (SiO2) on silicon carbide (SiC) in thermal oxidation is imperative for micro/nano fabrication processes, integration of electronic components, and evaluation of SiC device performance under extreme conditions. Herein, we report a comprehensive study on the effects of crystalline orientations, thicknesses, and growth temperatures of cubic SiC films on their wet oxidation properties. The oxidation rate and surface morphology were characterized using atomic force microscopy (AFM) and light reflectance measurement systems. Our experimental results revealed the role of defects in the SiC crystal on the oxidation that relates to SiC thickness, deposition conditions, crystal orientation and temperature of wet oxidation. Critically, the electrical properties of SiC films oxidized at 900 °C remained the same as the unoxidized film as confirmed by room-temperature current-voltage measurements, indicating a long-term service temperature of SiC. These findings are expected to provide crucial information on the effects of defects on the formation of SiO2 on SiC films at different oxidation temperatures, which is highly essential for establishing a basic platform for the fabrication of high-performance SiC-based electronic devices. |
Keywords | MEMS; Wet oxidation; Silicon carbide; Epitaxial growth; Harsh environments |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
University of Queensland | |
School of Mechanical and Electrical Engineering | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q6111/wet-oxidation-of-3c-sic-on-si-for-mems-processing-and-use-in-harsh-environments-effects-of-the-film-thicknesses-crystalline-orientations-and-growth-temperatures
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