Piezoresistive effect with a gauge factor of 18 000 in a semiconductor heterojunction modulated by bonded light-emitting diodes
Article
Article Title | Piezoresistive effect with a gauge factor of 18 000 in a |
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ERA Journal ID | 40638 |
Article Category | Article |
Authors | Nguyen, Thanh (Author), Dinh, Toan (Author), Dau, Van Thanh (Author), Foisal, Abu Riduan Md (Author), Guzman, Pablo (Author), Nguyen, Hung (Author), Pham, Tuan Anh (Author), Nguyen, Tuan-Khoa (Author), Phan, Hoang- Phuong (Author), Nguyen, Nam-Trung (Author) and Dao, Dzung Viet (Author) |
Journal Title | ACS Applied Materials and Interfaces |
Journal Citation | 13 (29), pp. 35046-35053 |
Number of Pages | 8 |
Year | 2021 |
Publisher | American Chemical Society |
Place of Publication | United States |
ISSN | 1944-8244 |
1944-8252 | |
Digital Object Identifier (DOI) | https://doi.org/10.1021/acsami.1c05985 |
Web Address (URL) | https://pubs.acs.org/doi/abs/10.1021/acsami.1c05985 |
Abstract | Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED’s illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors. |
Keywords | piezoresistive effect, piezoresistance, piezoresistive sensors, light-emitting diode, bonding technique |
ANZSRC Field of Research 2020 | 401705. Microelectromechanical systems (MEMS) |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Griffith University |
School of Mechanical and Electrical Engineering | |
Institution of Origin | University of Southern Queensland |
Funding source | Australian Research Council (ARC) Grant ID DE210100852 |
Funding source | Australian Research Council (ARC) Grant ID LP160101553 |
https://research.usq.edu.au/item/q6792/piezoresistive-effect-with-a-gauge-factor-of-18-000-in-a-semiconductor-heterojunction-modulated-by-bonded-light-emitting-diodes
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