Enhanced Thermoelectric Performance of SnTe-Based Materials via Interface Engineering

Article

Tian, Bang-Zhou, Chen, Jie, Jiang, Xu-Ping, Tang, Jun, Zhou, Da-Li, Sun, Qiang, Yang, Lei and Chen, Zhi-Gang. 2021. "Enhanced Thermoelectric Performance of SnTe-Based Materials via Interface Engineering." ACS Applied Materials and Interfaces. 13 (42), pp. 50057-50064. https://doi.org/10.1021/acsami.1c16053
Article Title

Enhanced Thermoelectric Performance of SnTe-Based Materials via Interface Engineering

ERA Journal ID40638
Article CategoryArticle
AuthorsTian, Bang-Zhou, Chen, Jie, Jiang, Xu-Ping, Tang, Jun, Zhou, Da-Li, Sun, Qiang, Yang, Lei and Chen, Zhi-Gang
Journal TitleACS Applied Materials and Interfaces
Journal Citation13 (42), pp. 50057-50064
Number of Pages8
Year2021
PublisherAmerican Chemical Society
Place of PublicationUnited States
ISSN1944-8244
1944-8252
Digital Object Identifier (DOI)https://doi.org/10.1021/acsami.1c16053
Web Address (URL)https://pubs.acs.org/doi/10.1021/acsami.1c16053
Abstract

Interface engineering has been regarded as an effective strategy to improve thermoelectric (TE) performance by modulating electrical transport and enhancing phonon scattering. Herein, we develop a new interface engineering strategy in SnTe-based TE materials. We first use a one-step solvothermal method to synthesize SnTe powders decorated by Sb2Te3 nanoplates. After subsequent spark plasma sintering, we found that an ion-exchange reaction between the Sb2Te3 and SnTe matrixes happens to result in Sb doping and the formation of SnSb nanoparticles and the recrystallization of the nanograined SnTe at the grain boundaries of the SnTe matrix. Benefitting from this unique engineering, a significantly reduced lattice thermal conductivity of ∼0.64 W m-1 K-1 and a high zT of ∼1.08 (∼100% enhanced) at 873 K are achieved in SnTe-Sb0.06. Such improved TE properties are attributed to the optimized carrier concentration and valence band convergence due to the Sb doping and enhanced phonon scattering by interface engineering at the grain boundaries. This work has demonstrated a facile and effective method to realize high-TE-performance SnTe via interface engineering.

KeywordsSnTe; thermoelectric; ion-exchange reaction; interface modification; phonon scattering
Contains Sensitive ContentDoes not contain sensitive content
ANZSRC Field of Research 2020400402. Chemical and thermal processes in energy and combustion
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Byline AffiliationsSichuan University, China
University of Queensland
Centre for Future Materials
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