Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres
Article
Article Title | Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating |
---|---|
ERA Journal ID | 3854 |
Article Category | Article |
Authors | Bao, Deyue (Author), Sun, Qiang (Author), Huang, Linsen (Author), Chen, Jie (Author), Tang, Jun (Author), Zhou, Dali (Author), Hong, Min (Author), Yang, Lei (Author) and Chen, Zhi-Gang (Author) |
Journal Title | Chemical Engineering Journal |
Journal Citation | 430 (Part 1), pp. 1-9 |
Article Number | 132738 |
Number of Pages | 9 |
Year | 2022 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 1385-8947 |
1873-3212 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.cej.2021.132738 |
Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S1385894721043163 |
Abstract | Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb)2Te3-based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi0.5Sb1.5Te3 by amorphous Sb2S3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces and dopes S into Bi0.5Sb1.5Te3. Semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m−1 K−2 and a low thermal conductivity of 0.78 W m−1 K−1 is obtained in Bi0.5Sb1.5Te3-0.4%Sb2S3, leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi0.5Sb1.5Te3. Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi0.5Sb1.5Te3-0.4%Sb2S3-based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb2S3 induced interface engineering strategy for the development of high performance (Bi,Sb)2Te3-based thermoelectric materials. |
Keywords | Amorphous Sb2S3; Bi0.5Sb1.5Te3; High performance; Interface engineering; Thermoelectric |
ANZSRC Field of Research 2020 | 401699. Materials engineering not elsewhere classified |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Sichuan University, China |
University of Queensland | |
Centre for Future Materials | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q767q/thermoelectric-performance-of-p-type-bi-sb-2te3-incorporating-amorphous-sb2s3-nanospheres
68
total views4
total downloads0
views this month0
downloads this month