Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications
Article
Article Title | Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications |
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ERA Journal ID | 1448 |
Article Category | Article |
Authors | Nie, Tian-Xiao (Author), Chen, Zhi-Gang (Author), Wu, Yue-Qin (Author), Lin, Jian-Hui (Author), Zhang, Jiu-Zhan (Author), Fan, Yong-Liang (Author), Yang, Xin-Ju (Author), Jiang, Zui-Min (Author) and Zou, Jin (Author) |
Journal Title | Journal of Alloys and Compounds |
Journal Citation | 509 (9), pp. 3978-3984 |
Number of Pages | 7 |
Year | 2011 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 0925-8388 |
1873-4669 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.jallcom.2010.12.199 |
Web Address (URL) | http://ac.els-cdn.com/S0925838811000090/1-s2.0-S0925838811000090-main.pdf?_tid=ef7b870a-50ba-11e7-bf56-00000aacb35f&acdnat=1497415128_7c21981332ee4fb49c4ff78bfcf0c3fe |
Abstract | Amorphous SiOx nanowires, with diameters of ∼20 nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiOx nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiOx nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources. |
Keywords | electron microscopy; growth mechanism; metallic Ge catalysts; SiOx nanowires; visible emission; amorphous nanowires; comparative experiments; Ge-Si alloys; growth mechanism; metallic Ge catalysts; optoelectronic applications; photoluminescence spectrum; potential applications; quantum dot; self-organized; Si substrates; SiOx nanowires; solid-liquid-solid growths; synthesis temperatures; visible emissions; white light emitting diodes; solid state physics; chemical products generally; chemical agents and basic industrial chemicals; nanotechnology; light and optics; compound semiconducting materials; others, incl. Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium |
ANZSRC Field of Research 2020 | 510404. Electronic and magnetic properties of condensed matter; superconductivity |
401603. Compound semiconductors | |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Fudan University, China |
University of Queensland | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q4196/amorphous-siox-nanowires-catalyzed-by-metallic-ge-for-optoelectronic-applications
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