Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films
Article
Article Title | Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films |
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ERA Journal ID | 201288 |
Article Category | Article |
Authors | Zheng, Zhuang-Hao (Author), Shi, Xiao-Lei (Author), Ao, Dong-Wei (Author), Liu, Wei-Di (Author), Chen, Yue-Xing (Author), Li, Fu (Author), Chen, Shuo (Author), Tian, Xiao-Qing (Author), Li, Xin-Ru (Author), Duan, Jing-Yi (Author), Ma, Hong-Li (Author), Zhang, Xiang-Hua (Author), Liang, Guang-Xing (Author), Fan, Ping (Author) and Chen, Zhi-Gang (Author) |
Journal Title | Nano Energy |
Journal Citation | 81, pp. 1-12 |
Article Number | 105683 |
Number of Pages | 12 |
Year | 2021 |
Publisher | Elsevier |
Place of Publication | Netherlands |
ISSN | 2211-2855 |
2211-3282 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.nanoen.2020.105683 |
Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S2211285520312568 |
Abstract | Owing to the earth-abundancy, eco-friendliness and high thermoelectric performance, CoSb3 skutterudites have been employed in thermoelectric devices with a high energy conversion efficiency. However, the thermoelectric performance of CoSb3-based thin films is still relatively low within the medium temperature range. In this work, we report a record high ZT of ~0.65 at 623 K in the n-type Ag/In co-doped CoSb3 thin films, fabricated by a facile magnetron sputtering technique. Extensive characterizations and computational results indicate both Ag and In as fillers prefer to occupy the interstitial sites in the CoSb3 lattice. A 0.2% Ag doping induces impurity states in the band structure of CoSb3, boosts the density-of-states near the Fermi level and enhances the absolute Seebeck coefficient up to ~198 μV K−1. Simultaneously, a 4.2% In doping further tunes the bandgap, increases the electrical conductivity up to ~75 S cm−1, and contributes to an optimized power factor of ~2.94 μW cm−1 K−2 at 623 K. In addition, these interstitial dopants accompanying with dense grain boundaries contribute an ultra-low thermal conductivity of ~0.28 W m−1 K−1 at 623 K, leading to a high ZT in the film system. This work demonstrates that rational band engineering and structural manipulations can achieve high performance in n-type CoSb3-based thin films, which possess full potential for applying to miniature thermoelectric devices. |
Keywords | Thermoelectric; CoSb3; Thin film; Doping; Characterization; Calculation |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Byline Affiliations | Shenzhen University, China |
Centre for Future Materials | |
University of Rennes, France | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q6083/rational-band-engineering-and-structural-manipulations-inducing-high-thermoelectric-performance-in-n-type-cosb3-thin-films
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