Self-standing and high-performance B4C/Sn/acetylene black@reduced graphene oxide films as sodium-ion half/full battery anodes
Article
Article Title | Self-standing and high-performance B4C/Sn/acetylene black@reduced graphene oxide films as sodium-ion half/full battery anodes |
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ERA Journal ID | 210122 |
Article Category | Article |
Authors | Sun, Yu (Author), Yang, Yanling (Author), Shi, Xiao-Lei (Author), Suo, Guoquan (Author), Lu, Siyu (Author) and Chen, Zhi-Gang (Author) |
Journal Title | Applied Materials Today |
Journal Citation | 24, pp. 1-12 |
Article Number | 101137 |
Number of Pages | 12 |
Year | 2021 |
Publisher | Elsevier |
Place of Publication | Applied Materials Today |
ISSN | 2352-9407 |
2352-9415 | |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.apmt.2021.101137 |
Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S2352940721002018 |
Abstract | Sn-based materials show great potentials as sodium-ion battery (SIB) anodes. However, limited to the preparation process and expensive raw materials, it is a great challenge to large-scale produce self-standing Sn-based materials. Herein, we develop a cost-effective and large-scale production method to fabricate flexible B4C/Sn/acetylene black@reduced graphene oxide (B4C/Sn/AB@rGO) films as self-standing SIB anodes by using high energy ball milling technology and self-standing process. In the film, the coated B4C acts as a conductor to enhance the internal conductivity and AB is used as a shell of B4C/Sn to accelerate the absorption of electrolyte solution, while rGO plays a role as a tie to connect B4C/Sn/AB units to accelerate the electronic transmission and simultaneously alleviate the volume expansion during the charge/discharge process. Finally, the B4C/Sn/AB@rGO films as the SIB anodes deliver a high reversible capacity of 393.4 mA h g−1 at 0.1 A g−1 and excellent cycling stability at 1 A g−1 with the reversible capacity of 155.5 mA h g−1 over 500 cycles. Moreover, the assembled sodium-ion full cell shows a stable capacity at 201.5 mA h g−1 for 50 cycles at 0.1 A g−1. This study indicates that our synthetic B4C/Sn/AB@rGO film has a great potential as the self-standing SIB anode. |
Keywords | Large-scale; Film; SnSelf-standing; Sodium-ion half/full cells |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Byline Affiliations | Shaanxi University of Science and Technology, China |
Centre for Future Materials | |
Zhengzhou University, China | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q690w/self-standing-and-high-performance-b4c-sn-acetylene-black-reduced-graphene-oxide-films-as-sodium-ion-half-full-battery-anodes
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