Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
Article
Article Title | Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy |
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ERA Journal ID | 949 |
Article Category | Article |
Authors | Liao, Zhi-Ming (Author), Chen, Zhi-Gang (Author), Lu, Zhen-Yu (Author), Xu, Hong-Yi (Author), Guo, Ya-Nan (Author), Sun, Wen (Author), Zhang, Zhi (Author), Yang, Lei (Author), Chen, Ping-Ping (Author), Lu, Wei (Author) and Zou, Jin (Author) |
Journal Title | Applied Physics Letters |
Journal Citation | 102 (6) |
Article Number | 063106 |
Number of Pages | 5 |
Year | 2013 |
Publisher | AIP Publishing |
Place of Publication | United States |
ISSN | 0003-6951 |
1077-3118 | |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4792053 |
Web Address (URL) | http://aip.scitation.org/doi/10.1063/1.4792053 |
Abstract | GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires. |
Keywords | Au nanoparticle; formation mechanism; GaAs; GaAs(111); growth behaviour; high temperature; low temperatures; semiconductor nanowire; crystal growth; solid state physics; coatings and finishes; chemical products generally; chemistry; nanotechnology; single element semiconducting materials; semiconducting materials; electric and magnetic materials; precious metals; bioengineering |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 349999. Other chemical sciences not elsewhere classified |
Public Notes | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 102, 063106 (2013) and may be found at https://doi.org/10.1063/1.4792053. |
Byline Affiliations | University of Queensland |
Chinese Academy of Sciences, China | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q417z/au-impact-on-gaas-epitaxial-growth-on-gaas-111-b-substrates-in-molecular-beam-epitaxy
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