Achieving High-Performance Ge0.92Bi0.08Te Thermoelectrics via LaB6-Alloying-Induced Band Engineering and Multi-Scale Structure Manipulation

Achieving High-Performance Ge0.92Bi0.08Te Thermoelectrics via LaB6-Alloying-Induced Band Engineering and Multi-Scale Structure Manipulation

In this work, a LaB6-alloying strategy is reported to effectively boost the figure-of-merit (ZT) of Ge0.92Bi0.08Te-based alloys up to ≈2.2 at 723 K, attributed to a synergy of La-dopant induced band structuring and structural manipulation. Density-function-theory calculations reveal that La dopant enlarges the bandgap and converges the energy offset between the sub-valence bands in cubic-structured GeTe, leading to a significantly increased effective mass, which gives rise to a high Seebeck coefficient of ≈263 µV K−1 and in turn a superior power factor of ≈43 µW cm−1 K−2 at 723 K. Besides, comprehensive electron microscopy characterizations reveal that the multi-scale phonon scattering centers, including a high density of planar defects, Boron nanoparticles in tandem with enhanced boundaries, dispersive Ge nanoprecipitates in the matrix, and massive point defects, contribute to a low lattice thermal conductivity of ≈0.67 W m−1 K−1 at 723 K. Furthermore, a high microhardness of ≈194 Hv is witnessed in the as-designed Ge0.92Bi0.08Te(LaB6)0.04 alloy, derived from the multi-defect-induced strengthening. This work provides a strategy for developing high-performance and mechanical robust middle-temperature thermoelectric materials for practical thermoelectric applications.

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