Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance
Article
| Article Title | Thiol–Amine Complexes for the Synthesis and Surface Engineering of SnTe Nanomaterials toward High Thermoelectric Performance |
|---|---|
| ERA Journal ID | 35029 |
| Article Category | Article |
| Authors | Meng, Weite, Xu, Lixiang, Lu, Shaoqing, Li, Mingquan, Li, Mengyao, Zhang, Yu, Wang, Qingyue, Wang, Wen-Jun, Huo, Siqi, Bañares, Miguel A., Martin-Gonzalez, Marisol, Ibáñez, Maria, Cabot, Andreu, Hong, Min, Liu, Yu and Lim, Khak Ho |
| Journal Title | ACS Nano |
| Journal Citation | 19 (38), pp. 34395-34407 |
| Number of Pages | 13 |
| Year | 2025 |
| Publisher | American Chemical Society |
| Place of Publication | United States |
| ISSN | 1936-0851 |
| 1936-086X | |
| Digital Object Identifier (DOI) | https://doi.org/10.1021/acsnano.5c12627 |
| Web Address (URL) | https://pubs.acs.org/doi/10.1021/acsnano.5c12627 |
| Abstract | SnTe has attracted significant research interest as a lead-free alternative to PbTe; however, its intrinsically high hole concentration results in an undesirably low Seebeck coefficient and elevated electronic thermal conductivity, thus significantly limiting its thermoelectric (TE) performance. Herein, we present a cost-effective, binary thiol-amine-mediated colloidal synthesis method to synthesize Bi-doped SnTe nanoparticles, eliminating the use of tri-n-octylphosphine-based precursors. The introduction of an electron-rich Bi dopant reduces the hole concentration and increases the Seebeck coefficient. Furthermore, post-synthetic surface treatment with chalcogenidocadmate complexes promotes atomic interdiffusion during annealing and consolidation, leading to compositional redistribution and modulation of the electronic band structure. Density functional theory (DFT) calculations reveal that co-modification via Bi doping and CdSe-derived chalcogen incorporation reduces the energy offset at the valence band maxima from 0.30 eV to 0.10 eV, thereby enhancing valence band degeneracy. The synergistic structural and electronic band structure modulations produce an SnTe-based material with a record high power factor of 2.1 mW m–1 K–2 at 900 K, a maximum TE figure of merit (zT) of 1.2, and a promising theoretical conversion efficiency of 8.3%. This study reports a versatile and scalable colloidal synthesis strategy that integrates hierarchical structural modulation with electronic band engineering, offering a synergistic route to significantly enhance the TE performance. |
| Keywords | tin telluride; thiol–amine complexes; solution processing; doping; band engineering; thermoelectricity |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401703. Energy generation, conversion and storage (excl. chemical and electrical) |
| Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
| Byline Affiliations | Institute of Zhejiang University-Quzhou, China |
| Hefei University of Technology, China | |
| Zhengzhou University, China | |
| Zhejiang University, Wenzhou, China | |
| Zhejiang University, Hangzhou, China | |
| School of Engineering | |
| Centre for Future Materials | |
| Catalan Institute of Nanoscience and Nanotechnology, Spain | |
| Institute of Science and Technology Austria, Austria | |
| Catalonia Institute for Energy Research (IREC), Spain | |
| Catalan Institution for Research and Advanced Studies (ICREA), Spain |
https://research.usq.edu.au/item/100678/thiol-amine-complexes-for-the-synthesis-and-surface-engineering-of-snte-nanomaterials-toward-high-thermoelectric-performance
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