A Generalized Epitaxy Recipe for Ternary van der Waals AB2X4 Single Crystalline Thin Films
Article
| Article Title | A Generalized Epitaxy Recipe for Ternary van der Waals AB2X4 Single Crystalline Thin Films |
|---|---|
| ERA Journal ID | 213641 |
| Article Category | Article |
| Authors | Ouyang, Yujie, Li, Chunxia, Ge, Haoran, Lin, Weixiao, Su, Tingting, Tong, Qiwei, Luo, Jiangfan, Yan, Fan, Chen, Zhuo, Jiang, Dawen, Yang, Xisheng, Liu, Yong, Zhao, Yan, Huo, Siqi, Hong, Min, Zhang, Qingjie, Liu, Wei and Tang, Xinfeng |
| Journal Title | Materials Today Physics |
| Journal Citation | 58 |
| Article Number | 101834 |
| Number of Pages | 11 |
| Year | 2025 |
| Publisher | Elsevier |
| Place of Publication | United Kingdom |
| ISSN | 2542-5293 |
| Digital Object Identifier (DOI) | https://doi.org/10.1016/j.mtphys.2025.101834 |
| Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S2542529325001907 |
| Abstract | Two-dimensional van der Waals (vdW) ternary AB2X4 thin films have shown great potential in fields such as quantum transport, thermoelectrics, phase-change memory and spintronics. However, it is challenging to fabricate high-quality, phase-pure vdW ternary AB2X4 (000l) thin films, due to the difficulty of precise control over three elemental components and the complex growth kinetic conditions. Herein, we developed a general epitaxy recipe for engineering the growth kinetics of AB2X4 (000l) thin films to precisely control the stoichiometry and avoid binary impurities. Taking MnSb2Te4 (000l) as the typical example, we successfully demonstrated the fabrication of high-quality, phase-pure AB2X4 (000l) thin films with size of 10 × 10 mm2 by molecular beam epitaxy technique, achieving excellent reproducibility. The stoichiometry of MnSb2Te4 thin films could be effectively controlled by rationally tuning growth parameters. Moreover, the stable growth of MnSb2Te4 thin films was successfully achieved through substrate surface engineering, appropriate buffer layers, and layer-by-layer annealing processes. The established epitaxy was successfully applied to the large-area fabrication of five other AB2X4 (000l) thin films, which lays an important foundation for the controllable fabrication and application of complex vdW ternary thin films. |
| Keywords | Ternary AB2X4 thin films; Epitaxy recipe; Stoichiometry control; Substrate surface engineering; Layer-by-layer annealing |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401807. Nanomaterials |
| Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
| Byline Affiliations | Wuhan University of Technology, China |
| Wuhan University, China | |
| Sichuan University, China | |
| School of Engineering | |
| Centre for Future Materials |
https://research.usq.edu.au/item/zzz4v/a-generalized-epitaxy-recipe-for-ternary-van-der-waals-ab2x4-single-crystalline-thin-films
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