Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3
Article
Cheng, Rui, Ge, Haoran, Huang, Shengpu, Xie, Sen, Tong, Qiwei, Sang, Hao, Yan, Fan, Zhu, Liangyu, Wang, Rui, Liu, Yong, Hong, Min, Uher, Ctirad, Zhang, Qingjie, Liu, Wei and Tang, Xinfeng. 2024. "Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3." Science Advances. 10 (21). https://doi.org/10.1126/sciadv.adn9959
Article Title | Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3 |
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ERA Journal ID | 211335 |
Article Category | Article |
Authors | Cheng, Rui, Ge, Haoran, Huang, Shengpu, Xie, Sen, Tong, Qiwei, Sang, Hao, Yan, Fan, Zhu, Liangyu, Wang, Rui, Liu, Yong, Hong, Min, Uher, Ctirad, Zhang, Qingjie, Liu, Wei and Tang, Xinfeng |
Journal Title | Science Advances |
Journal Citation | 10 (21) |
Article Number | eadn9959 |
Number of Pages | 9 |
Year | 2024 |
Publisher | American Association for the Advancement of Science (AAAS) |
Place of Publication | United States |
ISSN | 2375-2548 |
Digital Object Identifier (DOI) | https://doi.org/10.1126/sciadv.adn9959 |
Web Address (URL) | https://www.science.org/doi/10.1126/sciadv.adn9959 |
Abstract | P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of- states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the G-M direction contributes to the maximum m*of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along G-K to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3. |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Byline Affiliations | Wuhan University of Technology, China |
Chongqing University, China | |
Wuhan University, China | |
School of Engineering | |
Centre for Future Materials | |
University of Michigan, United States |
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