Dilute Mn incorporation yielding prominent thermoelectric performances of Bi0.5Sb1.5Te3 based epitaxial films
Article
Zhu, Liangyu, Cheng, Rui, Ge, Haoran, Sang, Hao, Tong, Qiwei, Li, Xianda, Yan, Fan, Yu, Xiang, Liu, Yan, Su, Xianli, Hong, Min, Ballikaya, Sedat, Liu, Wei and Tang, Xinfeng. 2025. "Dilute Mn incorporation yielding prominent thermoelectric performances of Bi0.5Sb1.5Te3 based epitaxial films." Materials Today Energy. 49. https://doi.org/10.1016/j.mtener.2025.101843
| Article Title | Dilute Mn incorporation yielding prominent thermoelectric performances of Bi0.5Sb1.5Te3 based epitaxial films |
|---|---|
| ERA Journal ID | 213639 |
| Article Category | Article |
| Authors | Zhu, Liangyu, Cheng, Rui, Ge, Haoran, Sang, Hao, Tong, Qiwei, Li, Xianda, Yan, Fan, Yu, Xiang, Liu, Yan, Su, Xianli, Hong, Min, Ballikaya, Sedat, Liu, Wei and Tang, Xinfeng |
| Journal Title | Materials Today Energy |
| Journal Citation | 49 |
| Article Number | 101843 |
| Number of Pages | 9 |
| Year | 2025 |
| Publisher | Elsevier |
| Place of Publication | United Kingdom |
| ISSN | 2468-6069 |
| Digital Object Identifier (DOI) | https://doi.org/10.1016/j.mtener.2025.101843 |
| Web Address (URL) | https://www.sciencedirect.com/science/article/abs/pii/S2468606925000516 |
| Abstract | p-Type Bi0.5Sb1.5Te3 thermoelectric thin films hold significant promise for thermal management applications in microscale and wearable electronic devices. However, their inferior thermoelectric performances mainly caused by the relatively low carrier mobility hinder the broad applications. In this study, high-quality Mnx(Bi0.25Sb0.75)2-xTe3 (00l) films are fabricated using molecular beam epitaxy at low substrate temperatures. The high crystalline quality, strong (00l) texture, and low lattice defects ensure the high carrier mobility and meanwhile Mn doping optimize carrier concentration, which lead to high thermoelectric power factor. The low substrate temperature suppresses the formation of intrinsic point defects and leads to a high carrier mobility. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy confirm that dilute Mn incorporation generate MnSb substitutional defects, which served as effective acceptor defects and significantly modulated the Fermi level and hole density. Finally, the Mn0.0025(Bi0.25Sb0.75)1.9975Te3 film yields optimized hole density and carrier mobility of 7.59 × 1019 cm−3 and 147.13 cm2V−1s−1, respectively, at room temperature, which results in prominent power factor of 6.20 mWm−1K−2, representing one of the highest values among recent reports. The superior power factor obtained in dilute Mn incorporated Mnx(Bi0.25Sb0.75)2-xTe3 films offers valuable insights for further optimizing thermoelectric performances and device applications of p-type Bi0.5Sb1.5Te3-based films. |
| Keywords | Carrier transport; p-type Bi0.5Sb1.5Te3; Molecular beam epitaxy; Dilute Mn incorporation; Thermoelectric power factor |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401605. Functional materials |
| Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
| Byline Affiliations | Wuhan University of Technology, China |
| School of Engineering | |
| Centre for Future Materials | |
| Istanbul University, Turkiye |
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