Achieving Extraordinary Power Factors in GeTe Epitaxial Films through Carrier Transport Engineering
Article
Xiang, Qian, Chen, Tuo, Su, Tingting, Yan, Fan, Ge, Haoran, Xie, Sen, Hong, Min, Luo, Yubo, Yang, Junyou, Liu, Yong, Su, Xianli, Burkov, Alexander, Liu, Wei and Tang, Xinfeng. 2025. "Achieving Extraordinary Power Factors in GeTe Epitaxial Films through Carrier Transport Engineering." ACS Applied Materials and Interfaces. 17 (12), pp. 18781-18789. https://doi.org/10.1021/acsami.5c00810
| Article Title | Achieving Extraordinary Power Factors in GeTe Epitaxial Films through Carrier Transport Engineering |
|---|---|
| ERA Journal ID | 40638 |
| Article Category | Article |
| Authors | Xiang, Qian, Chen, Tuo, Su, Tingting, Yan, Fan, Ge, Haoran, Xie, Sen, Hong, Min, Luo, Yubo, Yang, Junyou, Liu, Yong, Su, Xianli, Burkov, Alexander, Liu, Wei and Tang, Xinfeng |
| Journal Title | ACS Applied Materials and Interfaces |
| Journal Citation | 17 (12), pp. 18781-18789 |
| Number of Pages | 9 |
| Year | 2025 |
| Publisher | American Chemical Society |
| Place of Publication | United States |
| ISSN | 1944-8244 |
| 1944-8252 | |
| Digital Object Identifier (DOI) | https://doi.org/10.1021/acsami.5c00810 |
| Web Address (URL) | https://pubs.acs.org/doi/10.1021/acsami.5c00810 |
| Abstract | GeTe-based films have attracted tremendous attention from the thermoelectric community owing to their excellent thermoelectric performance. It is vital to reduce the hole density and maintain a high carrier mobility for GeTe films; however, this remains a significant challenge. To overcome this drawback, we succeeded in fabricating high-crystalline quality GeTe-based films and remarkably improve their electrical properties using molecular beam epitaxy under a low substrate temperature and optimized Te/GeTe flux ratios. The Bi2Te3/GeTe double-layer buffer facilitated the reliable fabrication of high-quality GeTe films. The hole density and carrier mobility were synergistically optimized under a relatively low substrate temperature of 503 K and Te/GeTe flux ratio of 0.25/1 that suppress the formation of Ge vacancies, as well as a trace amount of Sb2Te3 incorporation that introduces SbTe substitutional defects. The best (GeTe)24/(Sb2Te3)0.25 film acquires a very low hole density of 2.57 × 1020 cm–3 and, simultaneously, a high carrier mobility of 96.53 cm2 V–1 s–1, which leads to an extraordinary power factor of 3.36 mW m–1 K–2 at room temperature as well as an average power factor of 4.15 mW m–1K–2 within 300–475 K, outperforming the values of GeTe from previous reports. This work provides valuable insights for fabricating high-performance GeTe-based films to promote their future applications near room temperature. |
| Keywords | carrier transport; GeTe; double-layer buffer; point defects; power factor |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401605. Functional materials |
| Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
| Byline Affiliations | Wuhan University of Technology, China |
| School of Engineering | |
| Centre for Future Materials | |
| Huazhong University of Science and Technology, China | |
| Ioffe Institute, Russia |
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