Achieving high carrier mobility and thermoelectric performance in nearly twin-free rhombohedral GeTe (00l) films
Article
Chen, Tuo, Xiang, Qian, Ge, Haoran, Li, Ziwei, Yan, Fan, Cheng, Jiahong, Hong, Min, Luo, Yubo, Yang, Junyou, Liu, Yong, Liu, Wei and Tang, Xinfeng. 2024. "Achieving high carrier mobility and thermoelectric performance in nearly twin-free rhombohedral GeTe (00l) films." Materials Today Energy. 42. https://doi.org/10.1016/j.mtener.2024.101550
Article Title | Achieving high carrier mobility and thermoelectric performance in nearly twin-free rhombohedral GeTe (00l) films |
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ERA Journal ID | 213639 |
Article Category | Article |
Authors | Chen, Tuo, Xiang, Qian, Ge, Haoran, Li, Ziwei, Yan, Fan, Cheng, Jiahong, Hong, Min, Luo, Yubo, Yang, Junyou, Liu, Yong, Liu, Wei and Tang, Xinfeng |
Journal Title | Materials Today Energy |
Journal Citation | 42 |
Article Number | 101550 |
Number of Pages | 10 |
Year | 2024 |
Publisher | Elsevier |
Place of Publication | United Kingdom |
ISSN | 2468-6069 |
Digital Object Identifier (DOI) | https://doi.org/10.1016/j.mtener.2024.101550 |
Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S2468606924000625 |
Abstract | GeTe-based thermoelectric (TE) films have garnered significant attentions due to their promising TE performance near room temperature. However, it is challenging to further optimizing the TE performance due to the inferior carrier mobility (μ) and the excessively high hole density (p). Herein, we developed a novel method based on molecular beam epitaxy technique to successfully fabricate nearly twin-free GeTe (00l) films via incorporating Bi2Te3 buffer layers to alleviate epitaxial strain. Consequently, μ was significantly enhanced. Additionally, through comprehensively investigating the processing conditions, we found that substrate temperature and Te/GeTe flux ratio can shape intrinsic atomic defects and further decrease p. With the optimal synthesis and processing conditions, the GeTe film achieves optimized p of 3.44 × 1020 cm−3 and a high μ of 73.31 cm2/V/s, which lead to the highest room-temperature power factor of 2.67 mWm/K2, outperforming the values of other GeTe films. This work provides important guidance on fabricating twin-free GeTe films and on further improving their TE performance. |
Keywords | Buffer layer; Molecular beam epitaxy; Electrical properties; Intrinsic defects; Twin structure |
Contains Sensitive Content | Does not contain sensitive content |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | The accessible file is the accepted version of the paper. Please refer to the URL for the published version. |
Byline Affiliations | Wuhan University of Technology, China |
School of Engineering | |
Centre for Future Materials | |
Huazhong University of Science and Technology, China |
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