Realizing high power factor and thermoelectric performance in band engineered AgSbTe2
Article
Zhang, Yu, Xing, C., Wang, Dongyang, Genç, Aziz, Lee, Seng Huat, Chang, Cheng, Li, Zhi, Zheng, Luyao, Lim, Khak Ho, Zhu, Hangtian, Smriti, Rabeya Bosry, Liu, Yu, Cheng, Shaobo, Hong, Min, Fan, Xiaolei, Mao, Zhiqiang, Zhao, Li-Dong, Cabot, Andreu, Zhao, Tiejun and Poude, Bed. 2025. "Realizing high power factor and thermoelectric performance in band engineered AgSbTe2." Nature Communications. 16 (1). https://doi.org/10.1038/s41467-024-55280-0
| Article Title | Realizing high power factor and thermoelectric performance in band engineered AgSbTe2 |
|---|---|
| ERA Journal ID | 122966 |
| Article Category | Article |
| Authors | Zhang, Yu, Xing, C., Wang, Dongyang, Genç, Aziz, Lee, Seng Huat, Chang, Cheng, Li, Zhi, Zheng, Luyao, Lim, Khak Ho, Zhu, Hangtian, Smriti, Rabeya Bosry, Liu, Yu, Cheng, Shaobo, Hong, Min, Fan, Xiaolei, Mao, Zhiqiang, Zhao, Li-Dong, Cabot, Andreu, Zhao, Tiejun and Poude, Bed |
| Journal Title | Nature Communications |
| Journal Citation | 16 (1) |
| Article Number | 22 |
| Number of Pages | 12 |
| Year | 2025 |
| Publisher | Nature Publishing Group |
| Place of Publication | United Kingdom |
| ISSN | 2041-1723 |
| Digital Object Identifier (DOI) | https://doi.org/10.1038/s41467-024-55280-0 |
| Web Address (URL) | https://www.nature.com/articles/s41467-024-55280-0 |
| Abstract | AgSbTe2 is a promising p-type thermoelectric material operating in the mid-temperature regime. To further enhance its thermoelectric performance, previous research has mainly focused on reducing lattice thermal conductivity by forming ordered nanoscale domains for instance. However, the relatively low power factor is the main limitation affecting the power density of AgSbTe2-based thermoelectric devices. In this work, we demonstrate that hole-doped AgSbTe2 with Sn induces the formation of a new impurity band just above the valence band maximum. This approach significantly improves the electrical transport properties, contrary to previous strategies that focused on reducing lattice thermal conductivity. As a result, we achieve a record-high power factor of 27 μWcm−1K−2 and a peak thermoelectric figure of merit zT of 2.5 at 673 K. This exceptional performance is attributed to an increased hole concentration resulting from the formation of the impurity band and a lower formation energy of the defect complexes ( |
| Contains Sensitive Content | Does not contain sensitive content |
| ANZSRC Field of Research 2020 | 401605. Functional materials |
| Byline Affiliations | Zhejiang University, Wenzhou, China |
| Pennsylvania State University, United States | |
| Zhengzhou University, China | |
| Cardiff University, United Kingdom | |
| Beihang University, China | |
| Northwestern University, United States | |
| Quzhou University, China | |
| Chinese Academy of Sciences, China | |
| Hefei University, China | |
| School of Engineering | |
| Centre for Future Materials | |
| University of Manchester, United Kingdom | |
| Catalan Institution for Research and Advanced Studies (ICREA), Spain | |
| Catalonia Institute for Energy Research (IREC), Spain |
Permalink -
https://research.usq.edu.au/item/zx0z4/realizing-high-power-factor-and-thermoelectric-performance-in-band-engineered-agsbte2
Download files
1
total views0
total downloads1
views this month0
downloads this month