Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-Nx/C) in acid solution
Paper
Paper/Presentation Title | Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-Nx/C) in acid solution |
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Presentation Type | Paper |
Authors | Xu, Li (Author), Pan, Guoshun (Author), Zou, Chunli (Author), Shi, Xiaolei (Author) and Liu, Yuyu (Author) |
Journal or Proceedings Title | Proceedings of the 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Article Number | 7017289 |
Number of Pages | 5 |
Year | 2015 |
Place of Publication | New York, United States |
ISBN | 9781479955565 |
Web Address (URL) of Paper | https://ieeexplore.ieee.org/document/7017289 |
Conference/Event | 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Event Details | 11th International Conference on Planarization/CMP Technology (ICPT 2014) Event Date 19 to end of 21 Nov 2014 Event Location Kobe, Japan |
Abstract | In this paper, a novel method for preparing atomically smooth gallium nitride (GaN) wafer surfaces which involves chemical mechanical polishing with a non-noble metal catalyst (Fe-N x ) in acidic slurry is presented. It was confirmed that non-noble metal catalyst based slurry could be used for gallium face of GaN. Atomic force microscope images of the processed surface indicate that an atomically flat surface with Ra=0.0518 nm was achieved after planarization and the processed surface has an atomic step-terrace structure. Besides, the rate of removal of the GaN surface was measured to be approximately 66.9 nm/h, more than triple times higher than that nothing was used as catalyst. |
Keywords | atomic force microscopy; catalysts; gallium nitride; III-V semiconductors; iron compounds; nitrides; polishing; precious metals |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Tohoku University, Japan | |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w19/atomically-smooth-gallium-nitride-surfaces-generated-by-chemical-mechanical-polishing-with-non-noble-metal-catalyst-fe-nx-c-in-acid-solution
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