Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
Article
Article Title | Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface |
---|---|
ERA Journal ID | 1106 |
Article Category | Article |
Authors | Pan, Guoshun (Author), Zhou, Yan (Author), Luo, Guihai (Author), Shi, Xiaolei (Author), Zou, Chunli (Author) and Gong, Hua (Author) |
Journal Title | Journal of Materials Science: Materials in Electronics |
Journal Citation | 24 (12), pp. 5040-5047 |
Number of Pages | 8 |
Year | 2013 |
Publisher | Springer |
Place of Publication | Netherlands |
ISSN | 0957-4522 |
1573-482X | |
Digital Object Identifier (DOI) | https://doi.org/10.1007/s10854-013-1519-1 |
Abstract | Due to its high mechanical hardness and excellent chemical inertness, SiC single-crystal wafer is extremely difficult to realize effectively removed total planarization. Owing to crystalline polarity and anisotropy, material removal rate (MRR) on Si-face (0001) of SiC wafer is significantly lower than C-face (0001¯) for a defect-free surface. In the paper, the slurry containing hydrogen peroxide (H2O2), potassium hydroxide and abrasive colloidal silica, is introduced to chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer, resulting in acquiring high MRR with 105 nm/h, and atomically flat defect-free surface with atomic step-terrace structure and roughness of 0.0667 nm by atomic force microscope (AFM), in order to satisfy further demands of electronic device fabrication towards substrate wafer performance. The effects of the three ingredients in the slurry towards MRR of SiC wafer, polished surface quality and coefficient of friction in polishing process are studied. Optical microscope, optical interferometry profiler and AFM are used to observe the polished surface. In addition, the CMP removal mechanism of SiC wafer and the formation of ultra-smooth surface are discussed. |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w20/chemical-mechanical-polishing-cmp-of-on-axis-si-face-6h-sic-wafer-for-obtaining-atomically-flat-defect-free-surface
176
total views9
total downloads5
views this month0
downloads this month