Effects of Silica Abrasive Size on Sapphire CMP Performances and Their Removal Mechanisms
Paper
Zhou, Yan, Pan, Guoshun, Shi, Xiaolei, Gong, Hua, Zou, Chunli and Xu, Li. 2016. "Effects of Silica Abrasive Size on Sapphire CMP Performances and Their Removal Mechanisms." 2015 International Conference on Planarization/CMP Technology (ICPT 2015). Chandler, United States 30 Sep - 02 Oct 2015 Piscataway, United States.
Paper/Presentation Title | Effects of Silica Abrasive Size on Sapphire CMP Performances and Their Removal Mechanisms |
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Presentation Type | Paper |
Authors | Zhou, Yan (Author), Pan, Guoshun (Author), Shi, Xiaolei (Author), Gong, Hua (Author), Zou, Chunli (Author) and Xu, Li (Author) |
Journal or Proceedings Title | 2015 International Conference on Planarization/CMP Technology (ICPT) |
Article Number | 7412015 |
Number of Pages | 3 |
Year | 2016 |
Place of Publication | Piscataway, United States |
ISBN | 9781467386647 |
9781619565104 | |
Web Address (URL) of Paper | https://ieeexplore.ieee.org/document/7412015 |
Conference/Event | 2015 International Conference on Planarization/CMP Technology (ICPT 2015) |
Event Details | 2015 International Conference on Planarization/CMP Technology (ICPT 2015) Event Date 30 Sep 2015 to end of 02 Oct 2015 Event Location Chandler, United States |
Abstract | The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR by 10 nm silica slurry could appear rather high, approaching to two thirds of that by 100 nm silica slurry. The removal mechanisms of sapphire using different sizes silica have been investigated using atomic force microscopy (AFM) measurements through observing the variations of atomic step morphology on the wafer surface. |
Keywords | silica abrasive size; sapphire; Chemical Mechanical Polishing (CMP) |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
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