CMP of GaN using sulfate radicals generated by metal catalyst
Paper
Zou, Chunli, Pan, Guoshun, Xu, Li, Shi, Xiaolei and Liu, Yuyu. 2015. "CMP of GaN using sulfate radicals generated by metal catalyst." 11th International Conference on Planarization/CMP Technology (ICPT 2014). Kobe, Japan 19 - 21 Nov 2014 New York, United States. https://doi.org/10.1109/ICPT.2014.7017290
Paper/Presentation Title | CMP of GaN using sulfate radicals generated by metal catalyst |
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Presentation Type | Paper |
Authors | Zou, Chunli (Author), Pan, Guoshun (Author), Xu, Li (Author), Shi, Xiaolei (Author) and Liu, Yuyu (Author) |
Journal or Proceedings Title | Proceedings of the 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Article Number | 7017290 |
Number of Pages | 4 |
Year | 2015 |
Place of Publication | New York, United States |
ISBN | 9781479955565 |
Digital Object Identifier (DOI) | https://doi.org/10.1109/ICPT.2014.7017290 |
Web Address (URL) of Paper | https://ieeexplore.ieee.org/document/7017290 |
Conference/Event | 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Event Details | 11th International Conference on Planarization/CMP Technology (ICPT 2014) Event Date 19 to end of 21 Nov 2014 Event Location Kobe, Japan |
Abstract | A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO 4 - ) oxidizer and Fe 2+ activator in slurry is presented. The results indicate that complexing agent with Fe 2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm. |
Keywords | atomic force microscopy; catalysts; chemical mechanical polishing; III-V semiconductors; sulfur compounds; surface roughness |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Centre for Future Materials | |
Tohoku University, Japan | |
Institution of Origin | University of Southern Queensland |
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https://research.usq.edu.au/item/q5w16/cmp-of-gan-using-sulfate-radicals-generated-by-metal-catalyst
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