The effects of ultra-smooth surface atomic step morphology on CMP performances of sapphire and SiC wafers
Paper
Paper/Presentation Title | The effects of ultra-smooth surface atomic step morphology on CMP performances of sapphire and SiC wafers |
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Presentation Type | Paper |
Authors | Zhou, Yan (Author), Pan, Guoshun (Author), Shi, Xiaolei (Author), Zou, Chunli (Author), Gong, Hua (Author), Xu, Li (Author) and Luo, Guihai (Author) |
Journal or Proceedings Title | Proceedings of the 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Article Number | 7017291 |
Number of Pages | 4 |
Year | 2015 |
Place of Publication | New York, United States |
ISBN | 9781479955565 |
Digital Object Identifier (DOI) | https://doi.org/10.1109/ICPT.2014.7017291 |
Web Address (URL) of Paper | https://ieeexplore.ieee.org/document/7017291 |
Conference/Event | 11th International Conference on Planarization/CMP Technology (ICPT 2014) |
Event Details | 11th International Conference on Planarization/CMP Technology (ICPT 2014) Event Date 19 to end of 21 Nov 2014 Event Location Kobe, Japan |
Abstract | Whether sapphire or SiC wafer, clear and regular atomic step morphology could be observed all over the ultra-smooth wafer surface via atomic force microscopy (AFM) using our CMP technology. However, towards sapphire and SiC wafers, the variations of atomic step widths and step directions on the whole of wafer surface are different. The step widths and step directions on the different positions of sapphire wafer are uniform, while that on SiC wafer are distinct. Thus, the effects of atomic step width on CMP removal rate of sapphire and SiC wafers were studied. On the other side, the CMP removal model of super-hard hexagonal crystalline wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology towards different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism of the defects is discussed. |
Keywords | atomic force microscopy; sapphire; silicon carbide; silicon compounds |
ANZSRC Field of Research 2020 | 401605. Functional materials |
Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
Byline Affiliations | Tsinghua University, China |
Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q5w1q/the-effects-of-ultra-smooth-surface-atomic-step-morphology-on-cmp-performances-of-sapphire-and-sic-wafers
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