High near-room temperature figure of merit of n-type Bi2GeTe4-based thermoelectric materials via a stepwise optimization of carrier concentration
Article
| Article Title | High near-room temperature figure of merit of n-type Bi2GeTe4-based thermoelectric materials via a stepwise optimization of carrier concentration |
|---|---|
| ERA Journal ID | 3854 |
| Article Category | Article |
| Authors | Yin, Liang-Cao (Author), Liu, Wei-Di (Author), Shi, Xiao-Lei (Author), Gao, Han (Author), Li, Meng (Author), Wang, De-Zhuang (Author), Wu, Hao (Author), Kou, Liangzhi (Author), Guo, Haizhong (Author), Wang, Yifeng (Author), Liu, Qingfeng (Author) and Chen, Zhi-Gang (Author) |
| Journal Title | Chemical Engineering Journal |
| Journal Citation | 433 (Part 3), pp. 1-8 |
| Article Number | 133775 |
| Number of Pages | 8 |
| Year | 2022 |
| Publisher | Elsevier |
| Place of Publication | Netherlands |
| ISSN | 1385-8947 |
| 1873-3212 | |
| Digital Object Identifier (DOI) | https://doi.org/10.1016/j.cej.2021.133775 |
| Web Address (URL) | https://www.sciencedirect.com/science/article/pii/S1385894721053493 |
| Abstract | Bi2GeTe4 is a promising near room-temperature thermoelectric candidate with a low lattice thermal conductivity. Carrier concentration of intrinsic Bi2GeTe4 changes dramatically with tiny Ge content adjustment, leading to a challenge in carrier concentration optimization. To overcome this challenge, we firstly introduce excessive Ge into Bi2GeTe4 to shift the Fermi level deep into the conduction band and transfer Bi2GeTe4 into a highly degenerate n-type semiconductor. Secondly, the embedded p-type Bi2Ge2Te5 secondary phase induces further optimization of the Fermi level and carrier concentration. Finally, the power factor of the as-synthesized Bi2GeTe4-based material is significantly increased from ∼ 0.08 μW cm−1 K−2 to ∼ 4.2 μW cm−1 K−2 at 423 K when increasing the nominal Ge content (x) of Bi2GexTe4 from 1 to 1.45. Correspondingly, a high figure-of-merit of ∼ 0.22 at 423 K is achieved in Bi2GeTe4-based thermoelectric materials. This result indicates our viable stepwise strategy can be used to optimize carrier concentration and achieve high thermoelectric performance of the n-type Bi2GeTe4. |
| Keywords | Bi2GeTe4; Thermoelectric; Carrier concentration; Optimization; zT |
| ANZSRC Field of Research 2020 | 401605. Functional materials |
| Public Notes | Files associated with this item cannot be displayed due to copyright restrictions. |
| Byline Affiliations | Nanjing Tech University, China |
| Centre for Future Materials | |
| Zhengzhou University, China | |
| University of Queensland | |
| Queensland University of Technology | |
| Institution of Origin | University of Southern Queensland |
https://research.usq.edu.au/item/q6xy0/high-near-room-temperature-figure-of-merit-of-n-type-bi2gete4-based-thermoelectric-materials-via-a-stepwise-optimization-of-carrier-concentration
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